MMBF4391 |
RFQ for MMBF4391 Required Field |
 |
| Technical/Catalog Information | MMBF4391 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50mA @ 20V |
| Gate to Source Voltage (Vgs Max) | * |
| Input Capacitance (Ciss) @ Vds | 14pF @ 20V |
| Power - Max | 350mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23 |
| Voltage - Cutoff (VGS off) @ Id | 4V @ 1nA |
| Voltage - Breakdown (V(BR)GSS) | 30V |
| Resistance - RDS(On) | 30 Ohm |
| Current Drain (Id) - Max | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBF4391 MMBF4391 |
| Product | Manufacturers | Pack | D/C | |||||
| MMBF4391 | - | SOT-23 | 05+ |
N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.
|
Symbol |
Parameter |
Value |
Units |
|
VDG VGS IGF TJ ,Tstg |
Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range |
30 - 30 50 -55 to +150 |
V V mA |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
